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PDF SMBT3906 Data sheet ( Hoja de datos )
| Número de pieza | SMBT3906 | |
| Descripción | PNP Silicon Switching Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMBT3906 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SMBT3906/ MMBT3906
PNP Silicon Switching Transistor
3
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• Complementary type:
SMBT3904/ MMBT3904 (NPN)
2
1 VPS05161
Type
Marking
SMBT3906/ MMBT3906 s2A
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS = 71 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
40
40
5
200
330
150
-65 ... 150
Value
≤240
Unit
V
mA
mW
°C
Unit
K/W
1 Jul-28-2003
1 page  
DC current gain hFE = ƒ(IC)
VCE = 1 V, normalized
10 1
h FE 5
10 0
5
125 C
25 C
-55 C
SMBT3906/ MMBT3906
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
EHP00774
2
mA
Ι C 10 2
5
VCE
10 1
5
EHP00767
VBE
10 -1
10 -1
5 10 0
5 10 1 mA 10 2
ΙC
Total power dissipation Ptot = ƒ(TA*; TS)
* Package mounted on epoxy
10 0
0
0.2 0.4 0.6
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
0.8 1.0 V 1.2
VBE sat , VCE sat
400
mW
Ptot
300
200
100
EHP00766
10 3
Ptot max
Ptot DC
5
TA TS
10 2
5
10 1
5
EHP00936
D = tp
T
tp
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0 100
0 50 100 ˚C 150
10 -6 10 -5 10 -4 10 -3 10 -2 s
10 0
TA; TS
tp
5 Jul-28-2003
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SMBT3906.PDF ] | |
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