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PDF SMBT3906S Data sheet ( Hoja de datos )
| Número de pieza | SMBT3906S | |
| Descripción | PNP Silicon Switching Transistor Array | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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PNP Silicon Switching Transistor Array
• High DC current gain: 0.1mA to 100mA
• Low collector-emitter saturation voltage
• Two ( galvanic) internal isolated Transistors
with high matching in one package
• Complementary type: SMBT 3904S (NPN)
SMBT 3906S
4
5
6
3
2
1 VPS05604
Type
Marking Ordering Code Pin Configuration
Package
SMBT 3906S s2A
Q62702-A1202 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
VCEO
Value
40
Unit
V
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
VCBO
VEBO
IC
Ptot
Tj
Tstg
RthJA
RthJS
40
6
200
250
150
- 65...+150
mA
mW
°C
≤275
≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
SSeemmicicoonndduucctotor rGGrorouupp
11
Sep-109798-1-1919-081
1 page  
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
SMBT 3906S
300
mW
200
150
TS
TA
100
50
0
0
20 40 60 80 100 120 °C 150Kein
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
K/W
10 2
10 1
10 0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 3
-
D=0
10 2 0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
SSeemmicicoonndduucctotor rGGrorouupp
55
Sep-109798-1-1919-081
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMBT3906S.PDF ] | |
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