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SMBTA06M PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SMBTA06M
기능 NPN Silicon AF Transistor
제조업체 Siemens Semiconductor Group
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SMBTA06M 데이터시트, 핀배열, 회로
NPN Silicon AF Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA 56M (PNP)
SMBTA 06M
4
5
3
2
1
VPW05980
Type
Marking Ordering Code Pin Configuration
Package
SMBTA 06M s1G
Q62702-A3473 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS 95 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJA
RthJS
Value
80
80
4
500
1
100
200
1
150
- 65...+150
Unit
V
mA
A
mA
W
°C
110
55
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
SSeemmicicoonndduucctotor rGGrorouupp
11
Jun1-90988--11919-081




SMBTA06M pdf, 반도체, 판매, 대치품
SMBTA 06M
DC current gain hFE = f(IC)
VCE = 1V
10 3
h FE
100 C
10 2 25 C
-50 C
10 1
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
EHP00821
10 3
Ι C mA
10 2
5
100 C
25 C
-50 C
EHP00819
10 1
5
10 0
10 -1
10 0
10 1
10 2 mA 10 3
ΙC
Collector cutoff current ICBO = f(TA)
VCB = VCEmax
10 0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 V 0.8
V CEsat
Collector current IC = f (VBE)
VCE = 1V
10 4
nA
Ι CBO
10 3
5
10 2
5
10 1
5
10 0
5
10 -1
0
50
SSeemmicicoonndduucctotor rGGrorouupp
max
EHP00820
10 3
mA
ΙC
10 2
5
10 1
typ 5
10 0
5
100 C 150
TA
44
10 -1
0
EHP00815
100 C
25 C
-50 C
0.5 1.0 V 1.5
V BE
Jun1-90988--11919-081

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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