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SMBTA06UPN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SMBTA06UPN
기능 NPN/PNP Silicon AF Transistor Array
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SMBTA06UPN 데이터시트, 핀배열, 회로
SMBTA06UPN
NPN/PNP Silicon AF Transistor Array
 High breakdown voltage
 Low collector-emitter saturation voltage
 Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
Top View
654
W1s
123
Direction of Unreeling
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
SC74_Tape
4
5
6
3
2
1
VPW09197
C1 B2 E2
654
TR1
TR2
123
E1 B1 C2
EHA07177
Type
SMBTA06UPN
Marking
s2P
Pin Configuration
Package
1=E 2=B 3=C 4=E 5=B 6=C SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
Value
80
80
4
500
1
100
200
330
150
-65 ... 150
Unit
V
mA
A
mA
mW
°C
105
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-21-2002




SMBTA06UPN pdf, 반도체, 판매, 대치품
SMBTA06UPN
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 3
Ι C mA
10 2
5
100 C
25 C
-50 C
EHP00819
10 1
5
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 3
mA
ΙC
10 2
5
EHP00818
100 ˚C
25 ˚C
-50 ˚C
10 1
5
10 0
5
10 0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 V 0.8
V CEsat
DC current gain hFE = f (IC)
VCE = 1V
10 -1
0
0.5 1.0 V 1.5
V BEsat
Collector current IC = f (VBE)
VCE = 1V
10 3
h FE
100 C
10 2 25 C
-50 C
10 1
EHP00821
10 3
mA
ΙC
10 2
5
10 1
5
10 0
5
10 0
10 -1
10 0
10 1
10 2 mA 10 3
ΙC
10 -1
0
4
EHP00815
100 C
25 C
-50 C
0.5 1.0 V 1.5
V BE
Aug-21-2002

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SMBTA06UPN

NPN/PNP Silicon AF Transistor Array

Infineon Technologies AG
Infineon Technologies AG

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