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부품번호 | SMBTA42 기능 |
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기능 | NPN Silicon High-Voltage Transistors | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
전체 7 페이지수
NPN Silicon High-Voltage Transistors
• Low collector-emitter saturation voltage
• Complementary types:
SMBTA92 / MMBTA92(PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBTA42/MMBTA42
32
1
Type
SMBTA42/MMBTA42
Marking
s1D
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
TS ≤ 74 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
Tstg
300
300
6
500
100
360
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
≤ 210
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2011-12-19
SMBTA42/MMBTA42
Transition frequency fT = ƒ(IC)
VCE = 10 V, f = 100 MHz
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 3 SMBTA 42/43
MHz
fT
10 2
5
EHP00839
10 1
10 0
5 10 1
5 10 2 mA 5 10 3
ΙC
Total power dissipation Ptot = ƒ(TS)
90
pF
70
60
50
40
CEB
30
20
10
CCB
00
4
8
12
16 V
22
VCB(VEB
Permissible Pulse Load RthJS = ƒ(tp)
400
mW
320
280
240
200
160
120
80
40
00 15 30 45 60 75 90 105 120 °C 150
TS
10 3
K/W
10 2
10 1
D=0.5
0.2
0.1
0.05
10 0
0.02
0.01
0.005
0
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
4 2011-12-19
4페이지 SMBTA42/MMBTA42
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
7 2011-12-19
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ SMBTA42.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SMBTA42 | NPN Silicon Transistors for High Voltages | Siemens Semiconductor Group |
SMBTA42 | NPN Silicon High-Voltage Transistors | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |