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PDF SI9933BDY-E3 Data sheet ( Hoja de datos )

Número de pieza SI9933BDY-E3
Descripción Dual P-Channel 2.5-V (G-S) MOSFET
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! SI9933BDY-E3 Hoja de datos, Descripción, Manual

New Product
Si9933BDY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.06 @ VGS = 4.5 V
20
0.10 @ VGS = 2.5 V
ID (A)
4.7
3.7
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
S1
G1
Ordering Information: Si9933BDY—E3 (Lead Free)
Si9933BDY-T1—E3 (Lead Free with Tape and Reel)
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS "12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
4.7
3.6
3.8
2.8
20
1.7
0.9
2.0 1.1
1.3 0.7
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
RthJA
RthJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72748
S-40237—Rev. A, 16-Feb-04
Typical
55
90
33
Maximum
62.5
110
40
Unit
_C/W
www.vishay.com
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SI9933BDY-E3 pdf
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1 0.05
0.02
Si9933BDY
Vishay Siliconix
0.01
104
Single Pulse
103
102
101
Square Wave Pulse Duration (sec)
1
10
Document Number: 72748
S-40237—Rev. A, 16-Feb-04
www.vishay.com
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