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SIW1711DIF-T13 데이터시트 PDF




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부품번호 SIW1711DIF-T13 기능
기능 BLUETOOTH RADIO MODEM
제조업체 RF Micro Devices
로고 RF Micro Devices 로고


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SIW1711DIF-T13 데이터시트, 핀배열, 회로
0
Features
• Single chip IC with 2.4 GHz
transceiver and GFSK modem with
digital interface to external baseband
processor.
• Fully compliant with Bluetooth
specification 1.1 and 1.2.
• Supports multiple external reference
clocks or crystal frequencies with on-
chip reference PLL.
• Direct-conversion architecture with
no external channel filter or VCO
resonator components.
• Single-ended RX/TX pins reduce
system BOM cost by eliminating a
balun. On-chip RX/TX switching
eliminates external RX/TX switch.
• Typical -85 dBm receiver sensitivity
with excellent interference rejection
performance.
• Class 2 and 3 transmit output power
up to +4 dBm with output power
control loop for accurate power
control.
• Hardware AGC dynamically adjusts
receiver performance in changing
environments.
• Low out-of-band spurious emissions
prevents interference with mobile
phone frequencies.
• Option for Class 1 designs with
RX/TX switch control and multiple
modes of gain control.
• On-chip voltage regulation simplifies
voltage input requirement. Regulator
bypass mode enables use of external
regulator.
• 1.8 Volt analog and digital core
voltages; 1.63 Volt to 3.63 Volt
external I/O interface voltage.
• Low power consumption in active and
standby modes.
SiW1711
BLUETOOTH® RADIO
MODEM
RF_IN
Voltage Regulator and Power
Distribution
LNA
0
90
ADC
PLL
Control
VCO/
PLL
IDAC
PWR
CNTL
RF_OUT
DRIVER
0
90
XTAL_P/CLK
XTAL_N
BB_CLK
Clock Generation and
Distribution
SPI_SS
SPI_TXD
SPI_RXD
SPI_CLK
Serial Programming
Interface (SPI)
ADC
DAC
GFSK
MODEM
RX_TX_DATA
CD_TXEN
DAC
Control
Register
File
System
Control
Logic
ENABLE_RM
HOP_STROBE
RESET_N
TX_RX_SWITCH
Product Description
The SiW1711™ Radio Modem is Silicon Wave's third-generation radio modem for
Bluetooth® wireless communications and is based on 0.18µm CMOS technology. This
highly integrated transceiver was specifically designed to meet the rigorous RF perfor-
mance required for integrating Bluetooth into mobile phone applications.
The SiW1711 Radio Modem combines a 2.4GHz radio transceiver and Gaussian Fre-
quency Shift Keying (GFSK) modem with digital control functions. The IC also incorpo-
rates analog and digital voltage regulators, a reference Phase Lock Loop (PLL) to
enable multiple input frequencies, and a power-on-reset (POR) circuit.
The SiW1711 Radio Modem uses direct conversion (zero-IF) architecture. This allows
digital filtering for excellent interference rejection as compared to low IF solutions, and
also results in fewer spurious responses. The receiver has excellent sensitivity due to a
low noise RF design combined with an advanced modem design. A fast hardware AGC
enables full discovery of any device within the dynamic range of the receiver (solves
near-far issues). The transmitter can maintain a stable output power level up to +4dBm
for class 2 operation, which in combination with the excellent receiver performance
ensures the maximum possible range at the lowest system cost.
The device is available in a 32-pin QFN package with 5 x 5 x 1 mm dimensions. Known
good die with bumps is also available. Operating temperature range is guaranteed from
-40°C to +85°C with available extended high temperature range to 105°C.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
GaAs HBT
GaAs MESFET
9SiGe HBT
Si CMOS
GaInP/HBT
GaN HEMT
SiGe Bi-CMOS
60 0047 R00Grf SiW1711 Radio Modem IC DS
September 30, 2004
Ordering Information
SiW1711
Bluetooth® Radio Modem
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
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SIW1711DIF-T13 pdf, 반도체, 판매, 대치품
SiW1711
System Specifications
Absolute Maximum Ratings
Parameter
Description
Min Max
VCC Analog circuit supply voltage
-0.3 3.63
VDD_IO
I/O supply voltage
-0.3 3.63
VBATT_ANA
Analog regulator supply voltage
-0.3 3.63
VBATT_DIG
Digital regulator supply voltage
-0.3 3.63
TST Storage temperature
-55 +125
RFMAX
Maximum RF input level
– +5
Absolute maximum ratings indicate limits beyond which the useful life of the device may be impaired or damage may occur.
Recommended Operating Conditions
Parameter
TOP
TEOP
VBATT_ANA
VBATT_DIG
VCC
VDD_IO
Description
Operating temperature (industrial grade)
Extended operating temperature
Supply for internal analog voltage regulator
Supply for internal digital voltage regulator
Analog supply voltage
Digital interface I/O supply voltage
Min Max
-40 +85
-40 +105
2.3 3.63
2.3 3.63
1.71
1.89
1.62
3.63
Unit
V
V
V
V
°C
dBm
Unit
°C
°C
V
V
V
V
ESD Rating
Symbol
Description
Rating
ESD
ESD protection - all pins1, human body model
2000 V
ESD
ESD protection - all pins, machine model
200 V
1This device is a high performance RF integrated circuit with an ESD rating of 2,000 volts (HBM conditions per Mil-Std-883, Method
3015). Handling and assembly of this device should only be done using appropriate ESD controlled processes.
Electrical Characteristics
DC Specification (TOP=+25°C, VDD_IO=3.0V)
Symbol
Description
VIL Input low voltage
VIH Input high voltage
VOL Output low voltage
VOH Output high voltage
IOH
Output high current
Output high current (pins 16, 19)
IOL
Output low current
Output low current (pins 16, 19)
IILI Input leakage current
Min.
GND - 0.1
0.7 * VDD_IO
GND
0.8 * VDD_IO
AC Characteristics (TOP=+25°C, VDD_IO=3.0V, CLOAD=15pF)
Symbol
Description
tr
Rise time
Rise time (pins 16, 19)
tf
Fall time
Fall time (pins 16, 19)
Min.
Current Consumption (TOP=+25°C, VBATT_ANA, VBATT_DIG = 3.3 V)
Symbol
Description
IDD_SLEEP
Current during sleep mode
IDD_IDLE
Current during idle, synthesizer not running
IDD_TRANSMIT
Current during continuous transmit
IDD_RECEIVE
Current during continuous receive
Min.
Typ.
500
4
500
4
<1
Typ.
Typ.
8
3
55
68
Max.
0.3 * VDD_IO
VDD_IO
0.2 * VDD_IO
VDD_IO
1
Unit
V
V
V
V
µA
mA
µA
mA
µA
Max.
30
16
24
13
Unit
ns
ns
ns
ns
Max.
30
5
65
75
Unit
µA
mA
mA
mA
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60 0047 R00Grf SiW1711 Radio Modem IC DS

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SIW1711DIF-T13 전자부품, 판매, 대치품
SiW1711
External Reference Requirements
It is possible to provide a number of reference frequencies that are typical on most cellular phones directly into pin 25
(XTAL_P/CLK) of the device. The following reference frequencies (in MHz) can be used: 3.84, 9.6, 12, 12.8, 13, 14.4,
15.36, 16, 16.8, 19.2, 19.68, 19.8, 26, 32, 38.4, and 48 MHz. For other frequencies, please contact applications support.
Parameter
Phase noise
Drive level
Description
100 kHz offset
1 kHz offset
10 kHz offset
AC coupled amplitude
DC coupled low peak voltage
DC coupled high peak voltage
Min
0.5
0
VCC - 0.3
Max
-100
-120
-140
VCC
0.3
VCC
Unit
dBc/Hz
dBc/Hz
dBc/Hz
VP-P
V
V
Crystal Requirements
If using a crystal as the source for the reference frequency, the typical parameters are outlined below. The system clock
crystal should operate in a fundamental, parallel resonant mode.
Parameter
Description
Min
Typ
Max
Units
Drive level
0.5 – 2.0 VP-P
ESR
Effective serial resistance1
– – 150
CO Holder capacitance2
– 3.0 5.0 pF
CL Load capacitance2
12.0
18.0
pF
CM Motional capacitance
– 6.0 –
fF
1For 32MHz crystal.
2The actual values for CO and CL are dependent on the crystal manufacturer and can be compensated for by an internal crystal calibra-
tion capability.
60 0047 R00Grf SiW1711 Radio Modem IC DS
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