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PDF SIW3000AIP1-T13 Data sheet ( Hoja de datos )
| Número de pieza | SIW3000AIP1-T13 | |
| Descripción | ULTIMATEBLUE RADIO PROCESSOR | |
| Fabricantes | RF Micro Devices | |
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Features
• Single-chip IC with 2.4 GHz
transceiver, baseband processor,
and on-chip protocol stack for
Bluetooth® wireless technology
• Compliant with Bluetooth
specification 1.2 features.
• Low cost 0.18 µm CMOS process
technology.
• 1.8 V analog and digital core
voltages; 1.62 V to 3.63 V external
I/O interface voltage.
• Typical -85 dBm receiver sensitivity,
+2 dBm transmitter power for up to
100 meters nominal range.
• On-chip VCO and PLL support
multiple GSM/GPRS and CDMA
cellular reference clock frequencies.
• Hardware AGC dynamically adjusts
receiver performance in changing
environments.
• Integrated 32-bit ARMTDMI®
processor for extended features.
• Full piconet connectivity with support
for up to 7 active and 8 parked
slaves.
• Scatternet compatible with
Microsoft® HID devices.
• Supports three SCO voice channels.
• Channel Quality Driven Data Rate
(CQDDR) controls multi-slot packets
to minimize packet overhead and
maximize data throughput.
• Option for Bluetooth + Wi-Fi
coexistence.
Applications
• Mobile phones.
• Notebook and desktop PCs.
• Cordless headsets.
• Personal digital assistants (PDAs).
• Computer accessories, peripherals,
and wireless printers/
keyboards/mice).
SiW3000
ULTIMATEBLUE™
RADIO PROCESSOR
To Antenna
Sleep Control
2.4 GHz
Direct
Conversion
Transceiver
Voltage
Reg
MODEM
Internal
32 kHz
Clock
Power
Management
Bluetooth
Baseband
with CVSD
ARM7TDMI®
Processor
SRAM
Data
Fast
Locking
PLL
ROM
HCI
Firmware
UART
USB
GPIO
Audio
CODEC
Interface
Up to 2 Mbs
USB Full
Speed
System I/O
CODEC
Master or
Slave
Crystal or Reference Clock
Block Diagram
Product Description
The SiW3000 UltimateBlue™ Radio Processor is a recent innovation for
Bluetooth® wireless technology. It combines the industry's best performing
and most highly integrated radio design with an ARMTDMI® processor
using CMOS technology. The SiW3000 uses direct conversion (zero-IF)
architecture. This allows digital filtering for excellent interference rejection as
compared to low IF solutions and also results in fewer spurious responses.
The lower-layer protocol stack software is integrated into the on-chip ROM.
Optional external Flash memory is also supported. The SiW3000 is
compliant with Bluetooth specification 1.2 features.
The device is available in multiple packages and bare die form with a
guaranteed operating temperature range from -40°C to +85°C and an
extended high temperature range to +105°C.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
GaAs HBT
GaAs MESFET
9SiGe HBT
Si CMOS
GaInP/HBT
GaN HEMT
SiGe Bi-CMOS
60 0049 R01Drf SiW3000 Radio Processor DS
September 30, 2004
Ordering Information
SiW3000
UltimateBlue™ Radio Processor
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
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1 page  
SiW3000
General System Requirements
System Reference Clock
The SiW3000 chip can use either an external crystal or a reference clock as the system clock input. The supported fre-
quencies are: 9.6 MHz, 12 MHz, 12.8 MHz, 13 MHz, 14.4 MHz, 15.36 MHz, 16 MHz, 16.8 MHz, 19.2 MHz, 19.68 MHz,
19.8 MHz, 26 MHz, 32 MHz, 38.4 MHz, and 48 MHz. The default reference frequency can be selected by setting the
proper system configuration parameter in the non-volatile memory (NVM). If the USB HCI transport will be used, the ref-
erence clock must be 32 MHz.
The system reference crystal/clock must have accuracy of ±20 PPM or better to meet the specification of Bluetooth. To
facilitate design and production, the SiW3000 processor incorporates internal crystal calibration circuits to allow factory
calibration of initial crystal frequency accuracy.
Low Power Clock
For the Bluetooth low power clock, a 32.768-kHz crystal may be used to drive the SiW3000 oscillator circuit, or alterna-
tively, a 32.768-kHz reference clock signal can be used instead of a crystal. If the lowest power consumption is not
required during low-power modes such as sniff, hold, park, and idle modes, the 32.768-kHz crystal may be omitted in the
design. If the 32.768-kHz clock source will be used, the clock source should be connected to the CLK32_IN pin and must
meet the following requirements:
• For AC-coupled via 100 pF or greater (peak-to-peak voltage):
400 mVP-P < CLK32_IN < VDD_C
• For DC-coupled:
CLK32_IN minimum peak voltage < VIL
CLK32_IN maximum peak voltage > VIH
Where VIL = 0.3 * VDD_C
Where VIH = 0.7 * VDD_C
For both cases, the signal is not to exceed:
-0.3 V < CLK32_IN < VDD_C + 0.3 V
Also, the CLK32_OUT pin must be coupled to VDD_P or GND through a 100 nF capacitor.
Power Supply Description
The SiW3000 Radio Processor operates at 1.8 V core voltage for internal analog and digital circuits. The chip has inter-
nal analog and digital voltage regulators simplifying power supply requirements to the chip. The internal voltage regula-
tors can be supplied directly from a battery or from other system voltage sources. Optionally, the internal regulators can
be by-passed if 1.8 V regulated source is available on the system.
Function
Internal Analog Regulator
Regulator input pin
VBATT_ANA = 2.3 to 3.63 V
Regulator output pin
VCC_OUT = 1.8 V
Table 1. Internal Regulator Used
Function
Analog Core Circuits
Circuit voltage supply pin
VCC = 1.8 V
Table 2. Internal Regulator Bypassed
Internal Digital Regulator
VBATT_DIG = 2.3 to 3.63 V
VDD_C = 1.8 V
Digital Core Circuits
VDD_C = 1.8 V
Note: Both regulators can be bypassed if external regulation is desired. When bypassing the analog regulator, the VBATT_ANA and VCC_OUT pins
must be tied together and the external analog voltage (1.8 V) should be applied to the VBATT_ANA pin. When bypassing the digital regulator, the
VBATT_DIG pin should be left unconnected and the external digital voltage (1.8 V) should be applied to VBB_OUT pin.
The power for the I/Os is taken from a separate source (VDD_P). VDD_P can range from 1.62 to 3.63 Volts to maintain
compatibility with a wide range of peripheral devices. Please check the pin list for the exact pins that are powered from
the VDD_P source. Power for the USB circuits is taken from a separate source (VDD_USB).
60 0049 R01Drf SiW3000 Radio Processor DS
5 of 24
5 Page 
SiW3000
System Specifications
Absolute Maximum Ratings
Parameter
Description
Min Max
VCC Analog circuit supply voltage
-0.3 3.63
VDD_IO
I/O supply voltage
-0.3 3.63
VBATT_ANA
Analog regulator supply voltage
-0.3 3.63
VBATT_DIG
Digital regulator supply voltage
-0.3 3.63
TST Storage temperature
-55 +125
RFMAX
Maximum RF input level
– +5
Absolute maximum ratings indicate limits beyond which the useful life of the device may be impaired or damage may occur.
Recommended Operating Conditions
Parameter
TOP
TEOP
VBATT_ANA
VBATT_DIG
VCC
VDD_C
VDD_P
VDD_USB
Description
Operating temperature (industrial grade)
Extended operating temperature
Unregulated supply voltage into internal analog regulator
Unregulated supply voltage into internal digital regulator
Regulated supply voltage directly into analog circuits
Regulated supply voltage directly into digital circuits
Digital interface I/O supply voltage
Regulated supply voltage for USB Interface to meet USB specification
requirements
Min
-40
-40
2.3
2.3
1.71
1.62
1.62
3.1
Max
+85
+105
3.63
3.63
1.89
2.16
3.63
3.63
Unit
V
V
V
V
°C
dBm
Unit
°C
°C
V
V
V
V
V
V
ESD Rating
Symbol
ESD
ESD protection - all pins
Description
Rating
2000 V
Note: This device is a high performance RF integrated circuit with an ESD rating of 2,000 volts (HBM conditions per Mil-Std-883, Method
3015). Handling and assembly of this device should only be done using appropriate ESD controlled processes.
Electrical Characteristics
DC Specification (TOP=+25 °C, VDD_P=3.0 V)
Symbol
Description
VIL Input low voltage
VIH Input high voltage
VOL Output low voltage
VOH Output high voltage
IOH
Output high current
Output high current (ball J8)
IOL
Output low current
Output low current (ball J8)
IILI Input leakage current
Min.
GND - 0.1
0.7. VDD_P
GND
0.8 . VDD_P
–
–
–
–
–
Typ.
–
–
–
–
1
4
1
4
1
Max.
0.3 . VDD_P
VDD_P
0.2 . VDD_P
VDD_P
–
–
–
–
–
Unit
V
V
V
V
mA
mA
mA
mA
µA
AC Characteristics (TOP= +25 °C, VDD_P=3.0 V, CLOAD=15 pF)
Symbol
Description
tr Rise time
tf Fall time
Max.
30
24
Unit
ns
ns
60 0049 R01Drf SiW3000 Radio Processor DS
11 of 24
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet SIW3000AIP1-T13.PDF ] | |
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