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PDF SGB07N120 Data sheet ( Hoja de datos )
| Número de pieza | SGB07N120 | |
| Descripción | Fast IGBT in NPT-technology | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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SGP07N120
SGB07N120
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-220-3-1
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGP07N120
SGB07N120
VCE
1200V
IC
8A
Eoff
0.7mJ
Tj
150°C
Package
TO-220AB
TO-263AB(D2PAK)
Ordering Code
Q67040-S4272
Q67040-S4273
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 8A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
-
Value
1200
16.5
7.9
27
27
±20
40
10
125
-55...+150
260
Unit
V
A
V
mJ
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02
1 page  
SGP07N120
SGB07N120
25A 25A
20A
VGE=17V
15A 15V
13V
11V
9V
10A 7V
20A
VGE=17V
15V
15A 13V
11V
9V
10A 7V
5A 5A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
25A
20A
15A
TJ=+150°C
TJ=+25°C
10A TJ=-40°C
5A
0A
3V 5V 7V 9V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
6V
IC=16A
5V
4V IC=8A
3V IC=4A
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Jul-02
5 Page 
SGP07N120
SGB07N120
Published by
Infineon Technologies AG i Gr.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
11
Jul-02
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SGB07N120.PDF ] | |
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