|
|
PDF SGB10N60A Data sheet ( Hoja de datos )
| Número de pieza | SGB10N60A | |
| Descripción | Fast IGBT in NPT-technology | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SGB10N60A (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
SGP10N60A, SGB10N60A
SGW10N60A
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1
(TO-263AB)
(TO-247AC)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP10N60A
SGB10N60A
SGW10N60A
VCE IC VCE(sat) Tj Package
600V 10A
2.3V
150°C TO-220AB
TO-263AB
TO-247AC
Ordering Code
Q67040-S4457
Q67040-S4507
Q67040-S4510
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 10 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
600
20
10.6
40
40
±20
70
Unit
V
A
V
mJ
10
92
-55...+150
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
1 page  
SGP10N60A, SGB10N60A
SGW10N60A
35A
30A
25A
20A
15A
10A
5A
V G E= 2 0 V
15V
13V
11V
9V
7V
5V
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
35A
30A
25A
20A
15A
10A
5A
V G E= 2 0 V
15V
13V
11V
9V
7V
5V
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
35A
30A
25A
T j= + 2 5 °C
+150°C
20A
15A
10A
5A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
3,5V
3,0V
IC=20A
2,5V
2,0V
IC=10A
IC=5A
1,5V
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5 Jul-02
5 Page 
SGP10N60A, SGB10N60A
SGW10N60A
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =55pF.
11 Jul-02
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SGB10N60A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SGB10N60 | Fast S-igbt in Npt-technology |  Infineon Technologies Corporation |
| SGB10N60A | Fast IGBT in NPT-technology | Infineon Technologies AG |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |