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PDF SGS13N60UF Data sheet ( Hoja de datos )
| Número de pieza | SGS13N60UF | |
| Descripción | Ultra-Fast IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SGS13N60UF
Ultra-Fast IGBT
April 2001
IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5A
• High input impedance
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
TO-220F
GCE
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
E
SGS13N60UF
600
± 20
13
6.5
52
45
18
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
2.7
62.5
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGS13N60UF Rev. A
1 page  
500
Common Emitter
V = 300V, V = ± 15V
CC GE
R
G
=
50Ω
T = 25℃
C
TC = 125℃
100
Eon
Eon
Eoff
10
Eoff
5
0
2
4 6 8 10 12 14
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
46
Ω
Tc = 25℃
12
9
300 V
6
VCC = 100 V
200 V
3
0
0 5 10 15 20
Gate Charge, Q [ nC ]
g
Fig 14. Gate Charge Characteristics
25
100
IC MAX. (Pulsed)
10 IC MAX. (Continuous)
50us
100us
1㎳
1 DC Operation
Single Nonrepetitive
Pulse T = 25℃
C
Curves must be derated
0.1 linerarly with increase
in temperature
0.05
0.3 1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
100
10
1
0.1
1
Safe Operating Area
V =20V, T =100oC
GE C
10 100
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1000
10
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
single pulse
0.01
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2001 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGS13N60UF Rev. A
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGS13N60UF.PDF ] | |
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