|
|
Número de pieza | SGS23N60UFD | |
Descripción | Ultra-Fast IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SGS23N60UFD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SGS23N60UFD
Ultra-Fast IGBT
April 2001
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
TO-220F
GCE
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
G
E
SGS23N60UFD
600
± 20
23
12
92
12
92
73
29
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
1.7
1.2
62.5
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGS23N60UFD Rev. A
1 page 1000
Eoff
100
Eon
Eon
Eoff
10
4
Common Emitter
V = 300V, V = ± 15V
CC GE
R
G
=
23Ω
T = 25℃
C
T = 125℃
C
8 12 16 20 24
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
RL = 25 Ω
12 TC = 25℃
9
300 V
6
200 V
VCC = 100 V
3
0
0 10 20 30 40
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
50
300
100 IC MAX. (Pulsed)
IC MAX. (Continuous)
10
50us
100us
1㎳
DC Operation
1
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
0.1 linerarly with increase
in temperature
0.05
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
200
100
10
1
0.1
1
Safe Operating Area
V = 20V, T = 100℃
GE C
10 100
Collector-Emitter Voltage, V [V]
CE
Fig 16. Turn-Off SOA Characteristics
1000
5
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
single pulse
0.005
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2001 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGS23N60UFD Rev. A
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SGS23N60UFD.PDF ] |
Número de pieza | Descripción | Fabricantes |
SGS23N60UF | Ultra-Fast IGBT | Fairchild Semiconductor |
SGS23N60UFD | Ultra-Fast IGBT | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |