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PDF SGS5N150 Data sheet ( Hoja de datos )

Número de pieza SGS5N150
Descripción General Description
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! SGS5N150 Hoja de datos, Descripción, Manual

SGS5N150UF
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
SGS5N150UF is designed for the Switching Power
Supply applications.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
• High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
GC E
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
SGS5N150UF
1500
± 20
10
5
20
50
20
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Typ.
--
--
Max.
2.5
62.5
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B

1 page




SGS5N150 pdf
Package Dimension
TO-220F (FS PKG CODE AQ)
10.16 ±0.20
(7.00)
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
0.35 ±0.10
#1
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
SGS5N150UF Rev. B

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