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PDF SGS5N60RUF Data sheet ( Hoja de datos )
| Número de pieza | SGS5N60RUF | |
| Descripción | Short Circuit Rated IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SGS5N60RUF
Short Circuit Rated IGBT
April 2001
IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A
• High input impedance
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
TO-220F
GCE
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGS5N60RUF
600
± 20
8
5
15
10
35
14
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
3.5
62.5
Units
V
V
A
A
A
µs
W
W
°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGS5N60RUF Rev. A
1 page  
1000
Common Emitter
V =±
GE
15V,
R
G
=
40Ω
T = 25℃ ━━
C
T = 125℃ ------
C
Eoff
100
Eon
3 4 5 6 7 8 9 10
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
50
I MAX. (Pulsed)
C
10
I MAX. (Continuous)
C
1
DC Operation
50us
100us
1㎳
0.1 Single Nonrepetitive
Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.01
0.3 1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristic
1000
15
Common Emitter
RL = 60Ω
12
T = 25℃
C
V = 100V
9 CC
300V
200V
6
3
0
0 3 6 9 12 15
Gate Charge, Qg [nC]
Fig 14. Gate Charge Characteristics
18
40
10
1
1
Safe Operating Area
VGE = 20V, TC = 100℃
10 100
Collector-Emitter Voltage, VCE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
0.01
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2001 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGS5N60RUF Rev. A
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGS5N60RUF.PDF ] | |
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