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PDF SGU04N60 Data sheet ( Hoja de datos )
| Número de pieza | SGU04N60 | |
| Descripción | Fast IGBT in NPT-technology | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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SGP04N60, SGB04N60
SGD04N60, SGU04N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
(TO-252AA)
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-251-3-1 (I-PAK)
(TO-251AA)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGP04N60
SGB04N60
SGD04N60
SGU04N60
VCE IC VCE(sat) Tj Package
Ordering Code
600V 4A
2.3V
150°C TO-220AB
Q67040-S4443
TO-263AB
Q67040-S4442
TO-252AA(DPAK) Q67041-A4708
TO-251AA(IPAK) Q67040-S4444
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 4 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
600
9.4
4.9
19
19
±20
25
Unit
V
A
V
mJ
10
50
-55...+150
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
1 page  
SGP04N60, SGB04N60
SGD04N60, SGU04N60
15A 15A
12A
VGE=20V
9A 15V
13V
11V
6A 9V
7V
5V
3A
12A
VGE=20V
9A 15V
13V
11V
6A 9V
7V
5V
3A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
14A
12A Tj=+25°C
-55°C
+150°C
10A
8A
6A
4A
2A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
3.0V
2.5V
IC = 8A
IC = 4A
2.0V
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5 Jul-02
5 Page 
SGP04N60, SGB04N60
SGD04N60, SGU04N60
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Published by
11
Figure E. Dynamic test circuit
Leakage inductance L σ =180nH
an d Stray capacity Cσ =180pF.
Jul-02
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SGU04N60.PDF ] | |
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