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PDF SGU15N40L Data sheet ( Hoja de datos )
| Número de pieza | SGU15N40L | |
| Descripción | General Description | |
| Fabricantes | Fairchild Semiconductor | |
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SGR15N40L / SGU15N40L
IGBT
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Features
• High input impedance
• High peak current capability (130A)
• Easy gate drive
Application
Strobe flash.
CC
G E D-PAK
G C E I-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
ICM (1)
PC
TJ
Tstg
TL
Description
Collector - Emitter Voltage
Gate - Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ TC = 25°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA (D-PAK)
RθJA (I-PAK)
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Thermal Resistance, Junction-to-Ambient
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
G
E
SGR / SGU15N40L
400
±6
130
45
-40 to +150
-40 to +150
300
Typ.
--
--
--
Max.
3.0
50
110
Units
V
V
A
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
1 page  
Package Dimension
(0.50)
6.60 ±0.20
5.34 ±0.30
(4.34)
D-PAK
(0.50)
2.30 ±0.10
0.50 ±0.10
MAX0.96
2.30TYP
[2.30±0.20]
0.76 ±0.10
2.30TYP
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(2XR0.25)
©2002 Fairchild Semiconductor Corporation
0.76 ±0.10
Dimensions in Millimeters
SGR15N40L / SGU15N40L Rev. A1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGU15N40L.PDF ] | |
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