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PDF SGU6N60UF Data sheet ( Hoja de datos )
| Número de pieza | SGU6N60UF | |
| Descripción | Ultra-Fast IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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SGU6N60UF
Ultra-Fast IGBT
IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G C E I-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGU6N60UF
600
± 20
6
3
25
30
12
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
4.0
110
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGU6N60UF Rev. A1
1 page  
200
Common Emitter
VCC = 300V, VGE = ± 15V
100
R
G
=
80Ω
TC = 25℃
TC = 125℃
Eon
Eon
Eoff
10
Eoff
5
1
234
Collector Current, IC [A]
5
6
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
100
Ω
Tc = 25℃
12
9
300 V
6
VCC = 100 V
200 V
3
0
0 3 6 9 12
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
15
50
Ic MAX. (Pulsed)
10
Ic MAX. (Continuous)
1
50us
100us
1㎳
DC Operation
0.1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.3 1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
50
10
1
0.1
1
Safe Operating Area
VGE=20V, TC=100oC
10 100
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1000
10
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
single pulse
0.01
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGU6N60UF Rev. A1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGU6N60UF.PDF ] | |
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