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PDF SGW13N60UFD Data sheet ( Hoja de datos )
| Número de pieza | SGW13N60UFD | |
| Descripción | Ultra-Fast IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SGW13N60UFD
Ultra-Fast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 37ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
CC
G E D2-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
G
E
SGW13N60UFD
600
± 20
13
6.5
52
8
56
60
25
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Typ.
--
--
--
Max.
2.0
3.5
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
1 page  
500
Common Emitter
V = 300V, V = ± 15V
CC GE
R
G
=
50Ω
T = 25℃
C
TC = 125℃
100
Eon
Eon
Eoff
10
Eoff
5
0
2
4 6 8 10 12 14
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
46
Ω
Tc = 25℃
12
9
300 V
6
VCC = 100 V
200 V
3
0
0 5 10 15 20
Gate Charge, Q [ nC ]
g
Fig 14. Gate Charge Characteristics
25
100
IC MAX. (Pulsed)
10 IC MAX. (Continuous)
50us
100us
1㎳
1 DC Operation
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
0.1 linearly with increase
in temperature
0.05
0.3 1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
100
10
1
0.1
1
Safe Operating Area
V =20V, T =100oC
GE C
10 100
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1000
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGW13N60UFD Rev. A1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SGW13N60UFD.PDF ] | |
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