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SGW15N60 데이터시트 PDF




Infineon Technologies AG에서 제조한 전자 부품 SGW15N60은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 SGW15N60 자료 제공

부품번호 SGW15N60 기능
기능 Fast IGBT in NPT-technology
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SGW15N60 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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SGW15N60 데이터시트, 핀배열, 회로
SGP15N60, SGB15N60
SGW15N60
Fast IGBT in NPT-technology
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1
(TO-263AB)
(TO-247AC)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP15N60
SGB15N60
SGW15N60
VCE IC VCE(sat) Tj Package
600V 15A
2.3V
150°C TO-220AB
TO-263AB
TO-247AC
Ordering Code
Q67040-S4508
Q67041-A4711
Q67040-S4235
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25 ,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
600
31
15
62
62
±20
85
Unit
V
A
V
mJ
10
139
-55...+150
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02




SGW15N60 pdf, 반도체, 판매, 대치품
SGP15N60, SGB15N60
SGW15N60
80A
Ic
70A
60A
50A
40A TC=80°C
30A
TC=110°C
20A
Ic
10A
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 21)
100A
10A
1A
tp=5µs
15µs
50µs
200µs
1ms
DC
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 150°C)
140W
120W
100W
80W
60W
40W
20W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 150°C)
35A
30A
25A
20A
15A
10A
5A
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150°C)
4 Jul-02

4페이지










SGW15N60 전자부품, 판매, 대치품
SGP15N60, SGB15N60
SGW15N60
1.8mJ
1.6mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
1.4mJ
1.2mJ
1.0mJ
0.8mJ
0.6mJ
Eon*
Eoff
0.4mJ
0.2mJ
0.0mJ
0A 5A 10A 15A 20A 25A 30A 35A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 2 1 ,
Dynamic test circuit in Figure E)
1.4mJ
1.2mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
1.0mJ
0.8mJ
0.6mJ
0.4mJ
Eoff
Eon*
0.2mJ
0.0mJ
0
20406080
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 15A,
Dynamic test circuit in Figure E)
1.0mJ
0.8mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
0.6mJ
0.4mJ
0.2mJ
Eon*
Eoff
0.0mJ
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 15A, RG = 2 1,
Dynamic test circuit in Figure E)
100K/W
D=0.5
0.2
10-1K/W 0.1
0.05
0.02
10-2K/W
0.01
10-3K/W
single pulse
R,(1/W)
0.5321
0.2047
0.1304
0.0027
τ, (s)=
0.04968
2.58*10-3
2.54*10-4
3.06*10-4
R1 R2
10-4K/W
1µs
C1=τ1/R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
1s
tp, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7 Jul-02

7페이지


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