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PDF SGW20N60HS Data sheet ( Hoja de datos )
| Número de pieza | SGW20N60HS | |
| Descripción | High Speed IGBT in NPT-technology | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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SGP20N60HS
SGW20N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
C
G
E
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
P-TO-220-3-1
(TO-220AB)
• High ruggedness, temperature stable behaviour
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff
Tj Package
SGP20N60HS 600V 20 240µJ 150°C TO220AB
SGW20N60HS 600V 20 240µJ 150°C TO-247AC
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25Ω
start TJ=25°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
EAS
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
Ordering Code
Q67040-S4498
Q67040-S4499
Value
600
36
20
80
80
115
Unit
V
A
mJ
±20
±30
10
178
-55...+150
175
260
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev.2 Aug-02
1 page  
SGP20N60HS
SGW20N60HS
50A
40A
30A
20A
VGE=20V
15V
13V
11V
9V
7V
5V
10A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
50A
40A
30A
20A
VGE=20V
15V
13V
11V
9V
7V
5V
10A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
40A
TJ=-55°C
25°C
150°C
20A
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
5,5V
5,0V
4,5V
4,0V
IC=40A
3,5V
3,0V
IC=20A
2,5V
2,0V
IC=10A
1,5V
1,0V
-50°C
0°C
50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev.2 Aug-02
5 Page 
SGP20N60HS
SGW20N60HS
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
11
Rev.2 Aug-02
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SGW20N60HS.PDF ] | |
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