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PDF SGW20N60RUF Data sheet ( Hoja de datos )
| Número de pieza | SGW20N60RUF | |
| Descripción | Short Circuit Rated IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SGW20N60RUF
Short Circuit Rated IGBT
IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 20A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
CC
G E D2-PAK
G
E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
SGW20N60RUF
600
± 20
32
20
60
10
195
75
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Typ.
--
--
Max.
0.64
40
Units
V
V
A
A
A
µs
W
W
°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGW20N60RUF Rev. A1
1 page  
Common Emitter
V = ± 15V, R = 10Ω
GE G
T = 25℃ ━━
C
T = 125℃ ------
C
1000
Eoff
Eoff
Eon
100
10
15 20 25 30 35
Collector Current, IC [A]
40
Fig 13. Switching Loss vs. Collector Current
100
I MAX. (Pulsed)
C
I MAX. (Continuous)
C
10
DC Operation
50㎲
100㎲
1㎳
1
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
15
Common Emitter
R
L
=
15
Ω
12 TC = 25℃
9
V = 100 V
CC
300 V
200 V
6
3
0
0 10 20 30 40 50
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
60
100
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGW20N60RUF Rev. A1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGW20N60RUF.PDF ] | |
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