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PDF SGW23N60UF Data sheet ( Hoja de datos )
| Número de pieza | SGW23N60UF | |
| Descripción | Ultra-Fast IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SGW23N60UF
Ultra-Fast IGBT
IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
CC
G E D2-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
E
SGW23N60UF
600
± 20
23
12
92
100
40
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
1.2
40
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGW23N60UF Rev. A1
1 page  
1000
Eoff
100
Eon
Eon
Eoff
10
4
Common Emitter
V = 300V, V = ± 15V
CC GE
R
G
=
23Ω
T = 25℃
C
T = 125℃
C
8 12 16 20 24
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
RL = 25 Ω
12 TC = 25℃
9
300 V
6
200 V
VCC = 100 V
3
0
0 10 20 30 40
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
50
300
100 IC MAX. (Pulsed)
IC MAX. (Continuous)
10
50us
100us
1㎳
DC Operation
1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
200
100
10
1
0.1
1
Safe Operating Area
V = 20V, T = 100℃
GE C
10 100
Collector-Emitter Voltage, V [V]
CE
Fig 16. Turn-Off SOA Characteristics
1000
5
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.005
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGW23N60UF Rev. A1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGW23N60UF.PDF ] | |
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