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Número de pieza | SGW6N60UFD | |
Descripción | Ultra-Fast IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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Ultra-Fast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 35ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
CC
G E D2-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
G
E
SGW6N60UFD
600
± 20
6
3
25
4
25
30
12
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Typ.
--
--
--
Max.
4.0
7.0
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGW6N60UFD Rev. A1
1 page 200
Common Emitter
VCC = 300V, VGE = ± 15V
100
R
G
=
80Ω
TC = 25℃
TC = 125℃
Eon
Eon
Eoff
10
Eoff
5
1
234
Collector Current, IC [A]
5
6
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
100
Ω
Tc = 25℃
12
9
300 V
6
VCC = 100 V
200 V
3
0
0 3 6 9 12
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
15
50
Ic MAX. (Pulsed)
10
Ic MAX. (Continuous)
1
50us
100us
1㎳
DC Operation
0.1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.3 1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
50
10
1
0.1
1
Safe Operating Area
VGE=20V, TC=100oC
10 100
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1000
10
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
single pulse
0.01
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGW6N60UFD Rev. A1
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SGW6N60UFD.PDF ] |
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