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PDF SI4413DY Data sheet ( Hoja de datos )
| Número de pieza | SI4413DY | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
P-Channel 30-V (D-S) MOSFET
Si4413DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0095 @ VGS = -10 V
-30
0.0145 @ VGS = -4.5 V
ID (A)
-13
- 10
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Notebook
- Load switch
- Battery switch
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
-30
"20
-13 -9
- 10.5
-7.5
-50
-2.7 -1.36
3.0 1.5
1.9 0.95
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72054
S-21977—Rev. A, 04-Nov-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
33
70
16
Maximum
42
84
21
Unit
_C/W
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si4413DY
Vishay Siliconix
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72054
S-21977—Rev. A, 04-Nov-02
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI4413DY.PDF ] | |
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