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PDF SI4473BDY Data sheet ( Hoja de datos )
| Número de pieza | SI4473BDY | |
| Descripción | P-Channel 14-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
P-Channel 14-V (D-S) MOSFET
Si4473BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.011 @ VGS = −4.5 V
−14
0.018 @ VGS = −2.5 V
ID (A)
−13
−10
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATION
D Battery Switch for Portable Devices
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4473BDY—E3 (lLead Free)
Si4473BDY-T1—E3 (Lead Free with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS −14
VGS "12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
−13 −9.8
−9.9
−7.8
−50
−2.3
−1.34
2.5 1.5
1.6 0.94
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72691
S-32676—Rev. A, 29-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
15
Maximum
50
85
18
Unit
_C/W
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New Product
Si4473BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72691
S-32676—Rev. A, 29-Dec-03
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI4473BDY.PDF ] | |
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