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PDF Si4488DY-T1 Data sheet ( Hoja de datos )
| Número de pieza | Si4488DY-T1 | |
| Descripción | N-Channel 150-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si4488DY
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
150 0.050 @ VGS = 10 V
ID (A)
5.0
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4488DY
Si4488DY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
IS
PD
TJ, Tstg
150
"20
5.0 3.5
4.0 2.8
50
25
2.8 1.4
3.1 1.56
2.0 1.0
- 55 to 150
Unit
V
A
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71240
S-03951—Rev. B, 26-May-03
Symbol
RthJA
RthJF
Typical
33
65
17
Maximum
40
80
21
Unit
_C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
10
Si4488DY
Vishay Siliconix
100 1000
Document Number: 71240
S-03951—Rev. B, 26-May-03
www.vishay.com
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet Si4488DY-T1.PDF ] | |
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