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PDF Si4511DY-T1 Data sheet ( Hoja de datos )
| Número de pieza | Si4511DY-T1 | |
| Descripción | N- and P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si4511DY
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
−20
rDS(on) (W)
0.0145 @ VGS = 10 V
0.017 @ VGS = 4.5 V
0.033 @ VGS = −4.5 V
0.050 @ VGS = −2.5 V
ID (A)
9.6
8.6
−6.2
−5
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Level Shift
D Load Switch
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
G1
Top View
Ordering Information:
Si4511DY
Si4511DY-T1 (with Tape and Reel)
Si4511DY—E3 (Lead (Pb)-Free)
Si4511DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
D1
S1
S2
G2
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
10 sec.
9.6
7.7
1.7
2
1.3
Steady State 10 sec.
20
"16
7.2
−6.2
5.8 −4.9
40
0.9 −1.7
1.1 2
0.7 1.3
−55 to 150
Steady State
−20
"12
−4.6
−3.7
−40
0.9
1.1
0.7
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
N-Channel
Typ
50
85
30
Max
62.5
110
40
P- Channel
Typ
50
90
30
Max
62.5
110
35
Unit
_C/W
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1
1 page  
Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
N−CHANNEL
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
85_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
Normalized Thermal Transient Impedance, Junction-to-Foot
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
VGS = 5 thru 3.5 V
32
3V
40
32
P-CHANNEL
Transfer Characteristics
TC = −55_C
25_C
24
2.5 V
24
125_C
16
8
0
0.0
2V
1.5 V
0.4 0.8 1.2 1.6
VDS − Drain-to-Source Voltage (V)
2.0
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
16
8
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS − Gate-to-Source Voltage (V)
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si4511DY-T1.PDF ] | |
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