|
|
PDF SI4539ADY Data sheet ( Hoja de datos )
| Número de pieza | SI4539ADY | |
| Descripción | N- and P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SI4539ADY (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Si4539ADY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
- 30
rDS(on) (W)
0.036 @ VGS = 10 V
0.053 @ VGS = 4.5 V
0.053 @ VGS = - 10 V
0.090 @ VGS = - 4.5 V
ID (A)
5.9
4.9
- 4.9
- 3.7
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4539ADY
Si4539ADY-T1 (with Tape and Reel)
D1
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30 - 30
"20
"20
5.9 4.4 - 4.9 - 3.7
4.7 3.6 - 3.9 - 2.9
30
1.7 0.9 - 1.7 - 0.9
2.0 1.1 2 1.1
1.3 0.7 1.3 0.7
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71131
S-03951—Rev. B, 26-May-03
Symbol
RthJA
RthJF
N-Channel
Typ Max
50 62.5
90 110
32 40
P-Channel
Typ Max
52 62.5
90 110
32 40
Unit
_C/W
www.vishay.com
2-1
1 page  
Si4539ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
NCHANNEL
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 10 thru 7 V
24
6V
5V
30
24
18 18
12
4V
6
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
12
6
0
0
1500
1 10
PCHANNEL
Transfer Characteristics
TC = - 55_C
25_C
125_C
12345
VGS - Gate-to-Source Voltage (V)
Capacitance
6
0.15
0.10
VGS = 4.5 V
0.05
VGS = 10 V
0.00
0
6 12 18 24
ID - Drain Current (A)
Document Number: 71131
S-03951—Rev. B, 26-May-03
30
1200
900
Ciss
600
Coss
300
Crss
0
06
12 18 24
VDS - Drain-to-Source Voltage (V)
30
www.vishay.com
2-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI4539ADY.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SI4539ADY | N- and P-Channel 30-V (D-S) MOSFET | Vishay Siliconix |
| SI4539ADY-T1 | N- and P-Channel 30-V (D-S) MOSFET | Vishay Siliconix |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |