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PDF Si5404DC-T1 Data sheet ( Hoja de datos )
| Número de pieza | Si5404DC-T1 | |
| Descripción | N-Channel 2.5-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel 2.5-V (G-S) MOSFET
Si5404DC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
20 0.030 @ VGS = 4.5 V
0.045 @ VGS = 2.5 V
1206-8 ChipFETr
1
D
D
D
D
D
DG
S
Bottom View
Ordering Information: Si5404DC-T1
ID (A)
7.2
5.9
D
Marking Code
AB XX
Lot Traceability
and Date Code
Part # Code
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"12
7.2 5.2
5.2 3.8
20
2.1 1.1
2.5 1.3
1.3 0.7
- 55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
40
80
15
50
95 _C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71057
S-31989—Rev. C, 13-Oct-03
www.vishay.com
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet Si5404DC-T1.PDF ] | |
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