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PDF SB40W03T Data sheet ( Hoja de datos )
| Número de pieza | SB40W03T | |
| Descripción | 30V/ 4A Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN4567
SB40W03T
Schottky Barrier Diode (Twin Type · Cathode Common)
30V, 4A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1254A
[SB40W03T]
trr Test Circuit
unit:mm
1257A
[SB40W03T]
1:Anode
2:Cathode
3:Anode
4:Cathode
SANYO:TP
1:Anode
2:Cathode
3:Anode
4:Cathode
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistive load, Tc=111˚C
50Hz, resistive load, Tc=92˚C, Total rating
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C (Value per element)
Parameter
Symbol
Conditons
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
VR
VF(1)
VF(2)
IR
C
trr
Rth(j-a)
Rth(j-c)
IR=1mA
IF=4A
IF=1A
VR=15V
VR=10V, f=1MHz
IF=IR=300mA , See specified Test Circuit.
SANYO:TP-FA
Ratings
30
35
4
8
40
–55 to +125
–55 to +125
Unit
V
V
A
A
A
˚C
˚C
Ratings
min typ
30
160
90
5
Unit
max
V
0.55 V
0.45 V
200 µA
pF
30 ns
˚C/W
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/42894YH (KOTO) BX-0024 No.4567-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SB40W03T.PDF ] | |
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