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부품번호 | P4KE30A 기능 |
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기능 | TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR | ||
제조업체 | General Semiconductor | ||
로고 | |||
전체 4 페이지수
P4KE6.8 THRU P4KE440CA
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 440 Volts Peak Pulse Power - 400 Watts
DO-204AL
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
Dimensions are in inches and (millimeters)
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ Glass passivated junction
♦ 400W peak pulse power capability with a 10/1000µs
waveform, repetition rate
(duty cycle): 0.01%
♦ Excellent clamping capability
♦ Low incremental surge resistance
♦ Fast response time: typically less
than 1.0ps from 0 Volts to V(BR) for
uni-directional and 5.0ns for bi-directional types
♦ Devices with V(BR)≥10V ID are typically ID less than 1.0µA
♦ High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AL molded plastic body over
passivated junction
Terminals: Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the color band denotes
the cathode, which is posititive with respect to the anode
under normal TVS operation
Mounting Position: Any
Weight: 0.012 ounce, 0.3 gram
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA suffix for types P4KE7.5 thru types P4KE440 (e.g. P4KE7.5CA, P4KE440CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Peak power dissipation with a 10/1000µs waveform
(NOTE 1, FIG. 1)
Peak pulse current with a 10/1000µs waveform
(NOTE 1)
Steady state power dissipation at TL=75°C
lead lengths 0.375" (9.5mm) (NOTE 2)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
(JEDEC Method) (NOTE 3)
Maximum instantaneous forward voltage at 25A for
unidirectional only (NOTE 4)
Operating junction and storage temperature range
SYMBOL
PPPM
IPPM
PM(AV)
IFSM
VF
TJ, TSTG
VALUE
Minimum 400
SEE TABLE 1
1.0
40.0
3.5/5.0
-55 to +175
NOTES:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
(4) VF=3.5 Volt max. for devices of V(BR)≤220V, and VF=5.0 Volt max. for devices of V(BR)>220V
UNITS
Watts
Amps
Watts
Amps
Volts
°C
1/20/99
RATINGS AND CHARACTERISTIC CURVES P4KE6.8 THRU P4KE440CA
FIG. 1 - PEAK PULSE POWER RATING CURVE
100
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
TA=25°C
FIG. 2 - PULSE DERATING CURVE
100
75
1.0 50
0.1
0.1µs
1.0µs 10µs 100µs 1.0ms
td, PULSE WIDTH, sec.
10ms
150
100
50
FIG. 3 - PULSE WAVEFORM
tr=10µsec.
PEAK VALUE
IPPM
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS
to 50% of IPPM
HALF VALUE - IPPM
2
10/1000µsec. WAVEFORM
as DEFINED by R.E.A.
td
0
0 1.0
2.0
t, TIME, ms
3.0
4.0
FIG. 5 - STEADY STATE POWER DERATING CURVE
1.00
L = 0.375”(9.5mm)
LEAD LENGTHS
60 HZ
RESISTIVE OR INDUCTIVE LOAD
0.75
0.50
0.25
1.6 x 1.6 x .040”
(40 x 40 x 1mm.)
COPPER HEAT SINKS
0
0 25 50 75 100 125 150 175 200
TL, LEAD TEMPERATURE,°C
FIG. 7 - TYPICAL REVERSE LEAKAGE CHARACTERISTICS
100
MEASURED AT DEVICES
10
STAND-OFF
VOLTAGE, VWM
1
TA=25°C
0.1
0.01
0
100 200 300 400
V(BR), BREAKDOWN VOLTAGE, VOLTS
500
25
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE, °C
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
UNIDIRECTIONAL
100,000
10,000
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
MEASURED at
ZERO BIAS
1000
MEASURED at
STAND-OFF
VOLTAGE, VWM
10
1.0 10 100 200
V(BR), BREAKDOWN VOLTAGE, VOLTS
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
50
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
40
30
20
10
0
1 10 100
NUMBER OF CYCLES AT 60 HZ
4페이지 | |||
구 성 | 총 4 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
P4KE30 | TRANSIENT VOLTAGE SUPPRESSORS DIODE | Jinan Gude Electronic Device |
P4KE30 | Zener Diode ( Rectifier ) | Microsemi Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |