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PDF 2MBI75S Data sheet ( Hoja de datos )
| Número de pieza | 2MBI75S | |
| Descripción | IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2MBI75S (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2MBI 75S-120
2-Pack IGBT
1200V
2x75A
IGBT MODULE ( S-Series )
I Features
• NPT-Technology
• Square SC SOA at 10 x IC
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
Switching Loss
• Low Losses And Soft Switching
I Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
I Outline Drawing
I Maximum Ratings and Characteristics
I Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
Continuous 25°C / 80°C
Collector
1ms 25°C / 80°C
Current
Continuous
1ms
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
*1
A.C. 1min.
Screw Torque
VCES
VGES
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
Vis
Mounting *2
Terminals *2
1200
± 20
100 / 75
200 / 150
75
150
600
+150
-40 ∼ +125
2500
3.5
3.5
V
A
W
°C
V
Nm
Note: 1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Test Conditions
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr,x
tr,i
tOFF
tf
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=75mA
VGE=15V IC=75A
VGE=0V
VCE=10V
f=1MHz
VCC = 600V
IC = 75A
VGE = ±15V
RG = 16Ω
Inductive Load
Tj = 25°C
Tj =125°C
Diode Forward On-Voltage
Reverse Recovery Time
VF
IF=75A; VGE=0V
Tj = 25°C
Tj =125°C
trr IF=75A
Min.
5.5
Typ.
7.2
2.3
2.8
9’000
1’875
1’650
0.35
0.25
0.10
0.45
0.08
2.3
2.0
Max.
1.0
200
8.5
2.6
1.2
0.6
1.0
0.3
3.0
350
Units
mA
nA
V
pF
µs
V
ns
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
0.05
Max.
0.21
0.47
Units
°C/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2MBI75S.PDF ] | |
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