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ATF38143 데이터시트 PDF




Agilent(Hewlett-Packard)에서 제조한 전자 부품 ATF38143은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 ATF38143 기능
기능 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
제조업체 Agilent(Hewlett-Packard)
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ATF38143 데이터시트, 핀배열, 회로
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-38143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 2 V, 10 mA (Typ.)
• 0.4 dB Noise Figure
• 16 dB Associated Gain
• 12.0 dBm Output Power at
1␣ dB Gain Compression
• 22.0 dBm Output 3rd Order
Intercept
Applications
• Low Noise Amplifier for
Cellular/PCS Handsets
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
DRAIN
SOURCE
SOURCE
GATE
Description
Agilent Technologies’s ATF-38143
is a high dynamic range, low
noise, PHEMT housed in a 4-lead
SC-70 (SOT-343) surface mount
plastic package.
Based on its featured perfor-
mance, ATF-38143 is suitable for
applications in cellular and PCS
handsets, LEO systems, MMDS,
and other systems requiring super
low noise figure with good
intercept in the 450␣ MHz to
10␣ GHz frequency range.
Note: Top View. Package marking
provides orientation and identification.
“8P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.




ATF38143 pdf, 반도체, 판매, 대치품
ATF-38143 Typical Performance Curves
30
OIP3
25
30
OIP3
25
20 20
15
P1dB
10
15
P1dB
10
55
0
0 10 20 30 40 50 60
CURRENT, I DS (mA)
Figure 6. OIP3 and P1dB vs. Id at 2 V,
2 GHz.
0
0 10 20 30 40 50 60
CURRENT, I DS (mA)
Figure 7. OIP3 and P1dB vs. Id at 2 V,
900 MHz.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 10 20 30 40 50 60
CURRENT, I DS (mA)
Figure 8. Noise Figure vs. Id at 2 V,
2 GHz.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 10 20 30 40 50 60
CURRENT, I DS (mA)
Figure 9. Noise Figure vs. Id at 2 V,
900 MHz.
22
21
20
19
18
17
16
15
0 10 20 30 40 50 60
CURRENT, I DS (mA)
Figure 10. Associated Gain vs. Id at 2 V,
2 GHz.
22
21
20
19
18
17
16
15
0 10 20 30 40 50 60
CURRENT, I DS (mA)
Figure 11. Associated Gain vs. Id at 2 V,
900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
10␣ mA bias. This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing.

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ATF38143 전자부품, 판매, 대치품
ATF-38143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA
Freq.
S11
S21
S12
(GHz) Mag. Ang. dB Mag. Ang. dB Mag. Ang.
0.5 0.97
-29 17.41 7.423 158 -27.74 0.041 72
0.8 0.93
-47 17.00 7.081 145 -24.01 0.063 61
1.0 0.91
-58 16.69 6.834 136 -22.50 0.075 55
1.5 0.83
-85 15.69 6.086 117 -20.00 0.100 40
1.8 0.78 -100 15.02 5.634 107 -19.17 0.110 33
2.0 0.76 -109 14.57 5.350 100 -18.71 0.116 28
2.5 0.71 -131 13.38 4.665 86 -17.99 0.126 18
3.0 0.68 -150 12.22 4.083 73 -17.65 0.131 9
4.0 0.65
180 10.24 3.251 50 -17.27 0.137 -5
5.0 0.65 153 8.68 2.716 30 -17.08 0.140 -18
6.0 0.66 129 7.35 2.330 11 -16.95 0.142 -30
7.0 0.68 107 6.03 2.003 -9 -16.95 0.142 -42
8.0 0.71
87 4.72 1.722 -27 -17.27 0.137 -53
9.0 0.73
68 3.57 1.509 -43 -17.46 0.134 -62
10.0 0.75
53 2.71 1.366 -60 -17.27 0.137 -72
11.0 0.79
36 1.61 1.204 -78 -17.39 0.135 -83
12.0 0.82
20 0.47 1.055 -94 -17.65 0.131 -94
13.0 0.84
8 -0.93 0.898 -110 -18.34 0.121 -104
14.0 0.85
-4 -2.24 0.773 -125 -18.86 0.114 -112
15.0 0.87
-18 -3.45 0.672 -140 -19.17 0.110 -122
16.0 0.88
-31 -4.63 0.587 -153 -19.49 0.106 -131
17.0 0.88
-41 -5.81 0.512 -167 -19.74 0.103 -141
18.0 0.89
-51 -7.27 0.433 -179 -20.54 0.094 -148
S22
Mag. Ang.
0.53 -26
0.51 -40
0.48 -50
0.42 -72
0.39 -85
0.37 -94
0.33 -114
0.31 -132
0.28 -163
0.28 172
0.28 147
0.29 122
0.32 99
0.35 83
0.40 70
0.45 52
0.50 35
0.54 17
0.59 2
0.63 -8
0.67 -19
0.70 -32
0.74 -41
MSG/MAG
(dB)
22.58
20.51
19.60
17.84
17.09
16.64
15.68
14.94
13.75
12.88
12.15
11.49
9.09
7.94
7.55
7.27
6.84
5.72
4.77
4.42
3.85
3.03
2.34
ATF-38143 Typical Noise Parameters
VDS = 2 V, IDS = 10 mA
Freq.
GHz
Fmin
dB
Γopt
Mag. Ang.
Rn/50
-
0.5 0.18 0.66
13 0.17
0.9 0.19 0.64
22 0.16
1.0 0.20 0.63
26 0.15
1.5 0.23 0.60
43 0.14
1.8 0.25 0.57
60 0.12
2.0 0.28 0.56
67 0.12
2.5 0.32 0.54
81 0.10
3.0 0.39 0.52
98 0.08
4.0 0.52 0.44 129 0.06
5.0 0.65 0.44 166 0.04
6.0 0.75 0.45 -165 0.04
7.0 0.84 0.48 -135 0.08
8.0 0.95 0.51 -106 0.16
9.0 1.10 0.55
-84 0.29
10.0 1.20 0.56
-65 0.46
Ga
dB
24.1
21.0
20.4
17.9
17.0
16.1
15.2
13.9
11.9
10.8
9.6
8.7
7.7
7.0
6.8
25
20
MSG
15
10
MAG
5
S21
0
-5
-10
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 10 mA.
Notes:
1. Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.

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관련 데이터시트

부품번호상세설명 및 기능제조사
ATF38143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)
ATF38143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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