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CPV362M4U 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 CPV362M4U은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 CPV362M4U 기능
기능 UltraFast IGBT IGBT SIP MODULE
제조업체 International Rectifier
로고 International Rectifier 로고


CPV362M4U 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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CPV362M4U 데이터시트, 핀배열, 회로
PD -5044
PRELIMINARY
CPV362M4U
IGBT SIP MODULE
UltraFast IGBT
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
3 Q1
6 Q2
1
D1 9 Q3
4
D2
12
Q4
D3
15
Q5
10
D4
18
Q6
D5
16
D6
Product Summary
Output Current in a Typical 20 kHz Motor Drive
7 13
4.6 ARMS per phase (1.3 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
19
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
7.2
3.9
22
22
3.4
22
±20
2500
23
9.1
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Units
V
A
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
–––
–––
0.10
20 (0.7)
Max.
5.5
9.0
–––
–––
Units
°C/W
g (oz)
12/23/96




CPV362M4U pdf, 반도체, 판매, 대치품
CPV362M4U
8
6
5
3
2
0
25 50 75 100 125 150
TC , Case Temperature ( C° )
3.0
VGE = 15V
80 us PULSE WIDTH
IC = 7.8A
2.0
IC = 3.9A
IC =1.95A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
D = 0.50
1 0.20
0 .1 0
0 .0 5
0 .0 2
0 .0 1
0 .1
SINGLE PULSE
(TH ERMA L RES PONSE)
0.01
0.000 01
0.00 01
PD M
Notes:
1. Du ty fact or D = t1 / t 2
t1
t2
2. P e ak TJ = P D M x Z th JC + T C
0 .00 1
0.01
0.1
t1 , Re ctan g ula r P u ls e D uratio n (s e c)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10

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CPV362M4U 전자부품, 판매, 대치품
100
VR = 200V
TJ = 1 25 °C
TJ = 2 5°C
80
60
40
IF = 4.0A
20
IF = 16A
IF = 8.0A
CPV362M4U
100
VR = 200 V
TJ = 125 °C
TJ = 25°C
10
IF = 8.0A
IF = 16A
I F = 4.0A
0
100 1000
dif /d t - (A/µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
VR = 200 V
TJ = 125 °C
TJ = 25°C
400
1
100 1000
dif /d t - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 200 V
TJ = 125 °C
TJ = 25°C
300
I F = 16A
200
I F = 8.0A
100
IF = 4.0 A
0
100 1000
dif /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
1000
IF = 4.0A
IF = 8.0A
IF = 16A
100
100
di f /dt - (A/µs)
1000
Fig. 17 - Typical di(rec)M/dt vs. dif/dt

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