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부품번호 | CPV362M4U 기능 |
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기능 | UltraFast IGBT IGBT SIP MODULE | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 10 페이지수
PD -5044
PRELIMINARY
CPV362M4U
IGBT SIP MODULE
UltraFast IGBT
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
3 Q1
6 Q2
1
D1 9 Q3
4
D2
12
Q4
D3
15
Q5
10
D4
18
Q6
D5
16
D6
Product Summary
Output Current in a Typical 20 kHz Motor Drive
7 13
4.6 ARMS per phase (1.3 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
19
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
7.2
3.9
22
22
3.4
22
±20
2500
23
9.1
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Units
V
A
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
–––
–––
0.10
20 (0.7)
Max.
5.5
9.0
–––
–––
Units
°C/W
g (oz)
12/23/96
CPV362M4U
8
6
5
3
2
0
25 50 75 100 125 150
TC , Case Temperature ( C° )
3.0
VGE = 15V
80 us PULSE WIDTH
IC = 7.8A
2.0
IC = 3.9A
IC =1.95A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
D = 0.50
1 0.20
0 .1 0
0 .0 5
0 .0 2
0 .0 1
0 .1
SINGLE PULSE
(TH ERMA L RES PONSE)
0.01
0.000 01
0.00 01
PD M
Notes:
1. Du ty fact or D = t1 / t 2
t1
t2
2. P e ak TJ = P D M x Z th JC + T C
0 .00 1
0.01
0.1
t1 , Re ctan g ula r P u ls e D uratio n (s e c)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
4페이지 100
VR = 200V
TJ = 1 25 °C
TJ = 2 5°C
80
60
40
IF = 4.0A
20
IF = 16A
IF = 8.0A
CPV362M4U
100
VR = 200 V
TJ = 125 °C
TJ = 25°C
10
IF = 8.0A
IF = 16A
I F = 4.0A
0
100 1000
dif /d t - (A/µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
VR = 200 V
TJ = 125 °C
TJ = 25°C
400
1
100 1000
dif /d t - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 200 V
TJ = 125 °C
TJ = 25°C
300
I F = 16A
200
I F = 8.0A
100
IF = 4.0 A
0
100 1000
dif /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
1000
IF = 4.0A
IF = 8.0A
IF = 16A
100
100
di f /dt - (A/µs)
1000
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CPV362M4F | IGBT SIP MODULE | International Rectifier |
CPV362M4FPbF | IGBT SIP Module | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |