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부품번호 | IR2106SPBF 기능 |
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기능 | HIGH AND LOW SIDE DRIVER | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 23 페이지수
Data Sheet No. PD60162 Rev. W
IR2106(4)(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Packages
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V (IR2106(4))
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs (IR2106)
• Also available LEAD-FREE
8-Lead SOIC
8-Lead PDIP
14-Lead SOIC
14-Lead PDIP
Description
2106/2301//2108//2109/2302/2304Feature Comparison
The IR2106(4)(S) are high voltage,
high speed power MOSFET and
IGBT drivers with independent high
and low side referenced output chan-
nels. Proprietary HVIC and latch
immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with
standard CMOS or LSTTL output,
Part
Input
logic
2106/2301
21064
2108
21084
2109/2302
21094
2304
HIN/LIN
HIN/LIN
IN/SD
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
yes
yes
Dead-Time
none
Internal 540ns
Programmable 0.54~5µs
Internal 540ns
Programmable 0.54~5µs
Internal 100ns
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
COM
Ton/Toff
220/200
220/200
750/200
160/140
down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high
side configuration which operates up to 600 volts.
Typical Connection
VCC
VCC
VB
HIN HIN HO
LIN LIN VS
COM
LO
IR2106
up to 600V
TO
LOAD
up to 600V
(Refer to Lead Assignments for cor-
rect pin configuration). This/These
diagram(s) show electrical connec-
tions only. Please refer to our Appli-
cation Notes and DesignTips for
proper circuit board layout.
HO
VCC
VCC
VB
HIN HIN VS
LIN LIN
VSS VSS COM
LO
IR21064
TO
LOAD
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1
IR2106(4)(S) & (PBF)
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V, VSS = COM and TA = 25°C unless otherwise specified. The VIL, VIH and IIN parameters are
referenced to VSS/COM and are applicable to the respective input leads. The VO, IO and Ron parameters are referenced to
COM and are applicable to the respective output leads: HO and LO.
Symbol
VIH
VIL
VOH
VOL
ILK
IQBS
IQCC
IIN+
IIN-
VCCUV+
VBSUV+
VCCUV-
VBSUV-
VCCUVH
VBSUVH
IO+
Definition
Logic “1” input voltage (IR2106(4))
Logic “0” input voltage (IR2106(4))
High level output voltage, VBIAS - VO
Low level output voltage, VO
Offset supply leakage current
Quiescent VBS supply current
Quiescent VCC supply current
Logic “1” input bias current
VIN = 5V (IR2106(4))
Logic “0” input bias current
VIN = 0V (IR2106(4))
VCC and VBS supply undervoltage positive going
threshold
VCC and VBS supply undervoltage negative going
threshold
Hysteresis
Output high short circuit pulsed current
IO- Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
2.9 —
—
VCC = 10V to 20V
— — 0.8
VCC = 10V to 20V
V
— 0.8 1.4
IO = 20 mA
— 0.3 0.6
IO = 20 mA
— — 50
VB = VS = 600V
20 75 130
VIN = 0V or 5V
60 120 180
VIN = 0V or 5V
µA
—5
20
——2
8.0 8.9 9.8
7.4 8.2 9.0
0.3 0.7 —
V
120 200 —
mA
250 350 —
VO = 0V,
PW ≤ 10 µs
VO = 15V,
PW ≤ 10 µs
4 www.irf.com
4페이지 IR2106(4)(S &(PbF))
HIN
LIN
HO
LO
Figure 1. Input/Output Timing Diagram
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HIN
LIN
ton
HO
LO
50%
50%
tr toff tf
90%
90%
10%
10%
Figure 2. Switching Time Waveform Definitions
HIN 50%
LIN
50%
LO HO
10%
MT MT
90%
LO HO
Figure 3. Delay Matching Waveform Definitions
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IR2106SPBF | HIGH AND LOW SIDE DRIVER | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |