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IR2110S 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IR2110S은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 IR2110S 기능
기능 HIGH AND LOW SIDE DRIVER
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IR2110S 데이터시트, 핀배열, 회로
Data Sheet No. PD60147 Rev.T
IR2110(S)/IR2113(S) &(PbF)
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE
Product Summary
VOFFSET (IR2110) 500V max.
(IR2113) 600V max.
IO+/-
2A / 2A
VOUT
10 - 20V
ton/off (typ.)
120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
Packages
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
14-Lead PDIP
IR2110/IR2113
16-Lead SOIC
IR2110S/IR2113S
(Also available
LEAD-FREE (PbF))
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
Typical Connection
up to 500V or 600V
HO
VDD
VDD
VB
HIN HIN VS
SD SD
LIN LIN VCC
VSS VSS COM
VCC LO
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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LOAD
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IR2110S pdf, 반도체, 판매, 대치품
IR2110(S)/IR2113(S) &(PbF)
Functional Block Diagram
VDD
HIN
SD
LIN
VSS
RQ
S
S
RQ
VDD /VCC
LEVEL
SHIFT
PULSE
GEN
VDD /VCC
LEVEL
SHIFT
HV
LEVEL
SHIFT
UV
DETECT
PULSE
FILTER
RQ
R
S
UV
DETECT
DELAY
Lead Definitions
Symbol Description
VDD
HIN
SD
LIN
VSS
VB
HO
VS
VCC
LO
COM
Logic supply
Logic input for high side gate driver output (HO), in phase
Logic input for shutdown
Logic input for low side gate driver output (LO), in phase
Logic ground
High side floating supply
High side gate drive output
High side floating supply return
Low side supply
Low side gate drive output
Low side return
Lead Assignments
VB
HO
VS
VCC
LO
COM
14 Lead PDIP
IR2110/IR2113
Part Number
16 Lead SOIC (Wide Body)
(Also available LEAD-FREE (PbF))
IR2110S/IR2113S
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IR2110S 전자부품, 판매, 대치품
IR2110(S)/IR2113(S) &(PbF)
250 250
200
150
100
Max.
Typ.
50
200
Max.
150
Typ.
100
50
0
-50
-25
0 25 50 75
Temperature (°C)
100 125
Figure 9A. Shutdown Time vs. Temperature
250
200
Max.
150
100
Typ
50
0
0 2 4 6 8 10 12 14 16 18 20
VDD Supply Voltage (V)
Figure 9C. Shutdown Time vs. VDD Supply Voltage
0
10 12 14 16 18 20
VCC/VBS Supply Voltage (V)
Figure 9B. Shutdown Time vs. VCC/VBS Supply Voltage
100
80
60
40
M ax.
Typ.
20
0
-50
-25
0 25 50 75
Temperature (°C)
100 125
Figure 10A. Turn-On Rise Time vs. Temperature
100 50
80 40
60
Max.
40
Typ.
20
30
Max.
20
Typ.
10
0
10
12 14 16 18
VBIAS Supply Voltage (V)
Figure 10B. Turn-On Rise Time vs. Voltage
20
0
-50
-25
0 25 50 75
Temperature (°C)
100 125
Figure 11A. Turn-Off Fall Time vs. Temperature
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광범위한 전력 반도체를 판매합니다.

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