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IRF1010ES 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF1010ES은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IRF1010ES 자료 제공

부품번호 IRF1010ES 기능
기능 Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
제조업체 International Rectifier
로고 International Rectifier 로고


IRF1010ES 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRF1010ES 데이터시트, 핀배열, 회로
l Advanced Process Technology
l Surface Mount (IRF1010ES)
l Low-profile through-hole (IRF1010EL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
G
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
www.irf.com
PD - 91720
IRF1010ES
IRF1010EL
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 12m
ID = 84A‡
S
D2Pak
IRF1010ES
TO-262
IRF1010EL
Max.
84‡
59
330
200
1.4
± 20
50
17
4.0
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
02/14/02




IRF1010ES pdf, 반도체, 판매, 대치품
IRF1010ES/IRF1010EL
6000
5000
4000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
2000
Coss
1000
Crss
0
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20 ID = 50A
16
12
VDS = 48V
VDS = 30V
VDS = 12V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 20 40 60 80 100 120 140
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.6 1.2 1.8
VSD ,Source-to-Drain Voltage (V)
2.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10 1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com

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IRF1010ES 전자부품, 판매, 대치품
IRF1010ES/IRF1010EL
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
„
-+

RG
VGS
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
[VDD]
[ISD]
www.irf.com
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
IRF1010E

Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A

International Rectifier
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IRF1010EL

Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)

International Rectifier
International Rectifier

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