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부품번호 | IRF121 기능 |
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기능 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs | ||
제조업체 | Intersil Corporation | ||
로고 | |||
전체 7 페이지수
Semiconductor
October 1997
IRF120, IRF121,
IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,
N-Channel, Power MOSFETs
Features
• 8.0A and 9.2A, 80V and 100V
• rDS(ON) = 0.27Ω and 0.36Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF120
TO-204AA
IRF120
IRF121
TO-204AA
IRF121
IRF122
TO-204AA
IRF122
IRF123
TO-204AA
IRF123
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09594.
Symbol
D
G
S
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
2-1
File Number 1565.2
IRF120, IRF121, IRF122, IRF123
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
IRF120
IRF121
6
IRF122
IRF123
4
2
0
25
50
75 100
125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
PDM
t1 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ= PDM x ZθJC + TC
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
100
IRF120, IRF121
IRF122, IRF123
10
10µs
100µs
1ms
OPERATION IN
THIS AREA LIMITED
1 BY rDS(ON)
10ms
TC = 25oC
DC
TJ = MAX RATED
SINGLE PULSE
0.1
IRF120, IRF122
IRF121, IRF123
1 10 100 1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
15
10V
12
VGS = 8V
9
80µs PULSE TEST
VGS = 7V
VGS = 6V
6
VGS = 5V
3
VGS = 4V
0
0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
2-4
4페이지 IRF120, IRF121, IRF122, IRF123
Test Circuits and Waveforms (Continued)
RL
+
RG
VDD
-
DUT
VGS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50kΩ
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
VDD
Qgs
Qg(TOT)
Qgd
VGS
D
G DUT
0
VDS
Ig(REF)
0
S
VDS
IG(REF)
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
0
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
2-7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ IRF121.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRF120 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
IRF120 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs | Intersil Corporation |
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