|
|
Número de pieza | IRF140 | |
Descripción | 28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF140 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
IRF140
March 1999 File Number 2306.3
28A, 100V, 0.077 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17421.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF140
TO-204AE
IRF140
NOTE: When ordering, use the entire part number.
Features
• 28A, 100V
• rDS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page Typical Performance Curves (Continued)
IRF140
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
1800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
CISS
1200
600
0
1
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
VDS ≥ 50V
80µs PULSE TEST
16
12
8
TJ = 175oC
TJ = 25oC
4
0
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
103
102
TJ = 175oC
10
TJ = 25oC
1
0 0.6 1.2 1.8 2.4 3.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 28A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
0
0 12 24 36 48 60
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF140.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF140 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
IRF140 | N-CHANNEL POWER MOSFET | Seme LAB |
IRF140 | 28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
IRF140 | TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A) | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |