Datasheet.kr   

IRF1404L 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF1404L은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IRF1404L 자료 제공

부품번호 IRF1404L 기능
기능 Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
제조업체 International Rectifier
로고 International Rectifier 로고


IRF1404L 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 10 페이지수

미리보기를 사용할 수 없습니다

IRF1404L 데이터시트, 핀배열, 회로
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
G
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V‡
Continuous Drain Current, VGS @ 10V‡
Pulsed Drain Current ‡
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‡
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)*
www.irf.com
PD -93853C
IRF1404S
IRF1404L
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.004
ID = 162A†
S
D2Pak
IRF1404S
TO-262
IRF1404L
Max.
162†
115†
650
3.8
200
1.3
± 20
519
95
20
5.0
-55 to +175
-55 to +175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
5/18/01




IRF1404L pdf, 반도체, 판매, 대치품
IRF1404S/L
12000
10000
8000
6000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
2000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 95A
16
12
VDS = 32V
VDS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
TJ = 175° C
100
TJ = 25° C
10
VGS = 0 V
1
0.4 0.8 1.2 1.6 2.0 2.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100 100us
1ms
10 10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com

4페이지










IRF1404L 전자부품, 판매, 대치품
IRF1404S/L
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple 5%
ISD
www.irf.com
* VGS = 5V for Logic Level Devices
Fig 14. For N-channel HEXFET® Power MOSFETs
7

7페이지


구       성 총 10 페이지수
다운로드[ IRF1404L.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
IRF1404

N-Channel MOSFET Transistor

Inchange Semiconductor
Inchange Semiconductor
IRF1404

Power MOSFET ( Transistor )

International Rectifier
International Rectifier

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵