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부품번호 | IRF1405 기능 |
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기능 | Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 9 페이지수
PD -93991A
AUTOMOTIVE MOSFET
IRF1405
Typical Applications
q Electric Power Steering (EPS)
q Anti-lock Braking System (ABS)
q Wiper Control
q Climate Control
q Power Door
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 5.3mΩ
ID = 169A
S
TO-220AB
Max.
169
118
680
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
3/25/01
IRF1405
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 101A
16
VDS = 44V
VDS = 27V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 60 120 180 240 300
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
TJ = 175° C
100
TJ = 25 ° C
10
VGS = 0 V
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100 100us
1ms
10 10ms
TC = 25° C
TJ = 175° C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 1000
100
10
Duty Cycle = Single Pulse
0.01
0.05
0.10
IRF1405
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 15. Typical Avalanche Current Vs.Pulsewidth
1.0E-02
1.0E-01
600
TOP
Single Pulse
BOTTOM 10% Duty Cycle
500 ID = 101A
400
300
200
100
0
25
50 75 100 125 150
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
www.irf.com
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC
Iav = 2∆T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7
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부품번호 | 상세설명 및 기능 | 제조사 |
IRF140 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
IRF140 | N-CHANNEL POWER MOSFET | Seme LAB |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |