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PDF IRF150 Data sheet ( Hoja de datos )
| Número de pieza | IRF150 | |
| Descripción | 40A/ 100V/ 0.055 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF150
March 1999 File Number 1824.3
40A, 100V, 0.055 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly Developmental Type TA17421.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF150
TO-204AE
IRF150
NOTE: When ordering, include the entire part number.
Features
• 40A, 100V
• rDS(ON) = 0.055Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF150
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40 -20
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4000
3200
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
2400
1600
800
00
CISS
COSS
CRSS
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
80µs PULSE TEST
16 TJ = -55oC
TJ = 25oC
12 TJ = 125oC
8
4
0
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
2
102
TJ = 150oC
10
TJ = 25oC
1.0
0
123
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
4
20
ID = 40A
FOR TEST CIRCUIT,
SEE FIGURE 19
15 VDS = 20V
VDS = 50V
10 VDS = 80V
5
0
0 28 56 84 112 140
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF150.PDF ] | |
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