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Datasheet IRF430 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IRF430 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF430
DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling
APPLICATIONS ·high speed applications such as
Switching power supplies,AC and DCmotor controls | Inchange Semiconductor | mosfet |
2 | IRF430 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | mosfet |
3 | IRF430 | N-CHANNEL POWER MOSFET IRF430
MECHANICAL DATA Dimensions in mm (inches)
40.01 (1.575) Max.
N–CHANNEL POWER MOSFET
26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls.
22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44)
1.63 (0.064) 1.52 (0.060)
V | Seme LAB | mosfet |
4 | IRF430 | 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET IRF430
Data Sheet March 1999 File Number
1572.4
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche | Intersil Corporation | mosfet |
5 | IRF430 | TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A) PD - 90336F
IRF430 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL
Product Summary
Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A
The HEXFETtechnology is the key to International Rectif | International Rectifier | transistor |
IRF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IRF-182xx | Inductors w w ELECTRICAL SPECIFICATIONS
MATERIAL SPECIFICATIONS
Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite.
a D . w
ta
Sh
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4U
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Inductors
Epoxy Conformal Coated Uniform Roll Coated
FEATURES
IRF
Vishay Dale
• Flame-retardant coating and color band identification. Vishay Intertechnology inductor | | |
2 | IRF-46 | Inductors Epoxy Conformal Coated
IRF-46
Vishay Dale
Inductors
Epoxy Conformal Coated, Axial Leaded
FEATURES
• Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi Vishay Siliconix inductor | | |
3 | IRF034 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF034
DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power supp Inchange Semiconductor mosfet | | |
4 | IRF034 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90585
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF034
IRF034 60V, N-CHANNEL
BVDSS RDS(on) 60V 0.050Ω
ID 25Α
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi International Rectifier transistor | | |
5 | IRF044 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF044
DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power sup Inchange Semiconductor mosfet | | |
6 | IRF044 | N-CHANNEL POWER MOSFET IRF044
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07 Seme LAB mosfet | | |
7 | IRF044 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
PD - 90584
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α
IRF044 60V, N-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of International Rectifier transistor | |
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Número de pieza | Descripción | Fabricantes | |
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