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PDF IRF6609 Data sheet ( Hoja de datos )
| Número de pieza | IRF6609 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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l Low Conduction Losses
l Low Switching Losses
l Ideal Synchronous Rectifier MOSFET
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
VDSS
20V
PD - 95822A
IRF6609
HEXFET® Power MOSFET
RDS(on) max
Qg
2.0mΩ@VGS = 10V 46nC
2.6mΩ@VGS = 4.5V
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
Max.
20
Units
V
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
Power Dissipation
±20
150
31 A
25
250
2.8
1.8 W
89
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
0.022
-40 to + 150
W/°C
°C
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
fjParameter
Junction-to-Ambient
gjJunction-to-Ambient
hjJunction-to-Ambient
ijJunction-to-Case
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Notes through are on page 10
www.irf.com
1
11/10/04
1 page  
IRF6609
150 2.5
120
2.0
90 ID = 250µA
60
1.5
30
0
25
50 75 100 125
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
1.0
150 -75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.6784
17.299
τ4τ4 17.566
9.4701
τi (sec)
0.00086
0.57756
8.94
106
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF6609.PDF ] | |
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