|
|
PDF IRF830 Data sheet ( Hoja de datos )
| Número de pieza | IRF830 | |
| Descripción | N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF830 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
® IRF830
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
IRF830
500 V
< 1.5 Ω
4.5 A
s TYPICAL RDS(on) = 1.35 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS Drain-source Voltage (VGS = 0)
500
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
500
± 20
4.5
2.9
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
18
100
Derating Factor
0.8
dv/dt(1) Peak Diode Recovery voltage slope
3.5
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤ 4.5A, di/dt ≤ 75 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
August 1998
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
IRF830
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF830.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF830 | PowerMOS transistor Avalanche energy rated |  NXP Semiconductors |
| IRF830 | N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET | STMicroelectronics |
| IRF830 | N-CHANNEL ENHANCEMENT MODE |  TRSYS |
| IRF830 | 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |  Intersil Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |