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PDF XN4506 Data sheet ( Hoja de datos )
| Número de pieza | XN4506 | |
| Descripción | NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN4506
NPN epitaxial planer transistor
For amplification of low frequency output
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SD1915(F) × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
50
20
25
300
500
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: EN
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
ON Resistance
*1 Ron test circuit
IB=1mA
VCEO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Ron*1
1kΩ
IC = 1mA, IB = 0
VCB = 50V, IE = 0
VEB = 25V, IC = 0
VCE = 2V, IC = 4mA
IC = 30mA, IB = 3mA
VCE = 2V, IC = 4mA
VCB = 6V, IE = –4mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VB VA
VV
f=1kHz
V=0.3V
Ron=
VB
VA–VB
!1000(Ω)
min
20
500
typ max Unit
V
0.1 µA
0.1 µA
2500
0.1 V
0.6 V
80 MHz
7 pF
1.0 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XN4506.PDF ] | |
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