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PDF XN6537 Data sheet ( Hoja de datos )
| Número de pieza | XN6537 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN6537
Silicon NPN epitaxial planer transistor
For wide-band low-noise amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SC3110 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
15
12
2.5
30
50
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 7H
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Transition frequency
Collector output capacitance
Forward transfer gain
Power gain
Noise figure
*1 Ratio between 2 elements
ICBO
IEBO
hFE
hFE (small/large)*1
fT
Cob
| S21e |2
GUM
NF
VCB = 10V, IE = 0
VEB = 2V, IC = 0
VCE = 10V, IC = 10mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 20mA, f = 0.8GHz
VCE = 10V, IC = 20mA, f = 0.8GHz
VCE = 10V, IC = 5mA, f = 0.8GHz
min
40
0.5
typ max Unit
100 nA
1 µA
0.99
4.5 GHz
1.2 pF
12 dB
14 dB
1.3 dB
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet XN6537.PDF ] | |
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