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Número de pieza | XP151A11B0MR | |
Descripción | POWER MOS FET | |
Fabricantes | Torex Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de XP151A11B0MR (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.17Ω (max)
NUltra High-Speed Switching
NGate Protect Diode Built-in
NSOT-23 Package
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
The XP151A11B0MR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.12Ω ( Vgs = 10V )
: Rds (on) = 0.17Ω ( Vgs = 4.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : 4.5V
High density mounting : SOT-23
11
802
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
( note ) : When implemented on a ceramic PCB
RATINGS
30
+ 20
1
4
1
0.5
150
-55 ~ 150
Ta=25OC
UNITS
V
V
A
A
A
W
OC
OC
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet XP151A11B0MR.PDF ] |
Número de pieza | Descripción | Fabricantes |
XP151A11B0MR | POWER MOS FET | Torex Semiconductor |
XP151A11B0MR-G | Power MOSFET ( Transistor ) | Torex Semiconductor |
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