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PDF XP152A01D8MR Data sheet ( Hoja de datos )

Número de pieza XP152A01D8MR
Descripción Power MOS FET
Fabricantes Torex Semiconductor 
Logotipo Torex Semiconductor Logotipo



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No Preview Available ! XP152A01D8MR Hoja de datos, Descripción, Manual

x P-Channel Power MOS FET
x DMOS Structure
x Low On-State Resistance: 0.48MAX
x Ultra High-Speed Switching
x SOT-23 Package
s Applications
q Notebook PCs
q Cellular and portable phones
q On-board power supplies
q Li-ion battery systems
s General Description
The XP152A01D8MR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-23 package makes high density mounting possible.
s Features
Low on-state resistance: Rds(on)=0.48(Vgs=-4.5V)
Rds(on)=0.80(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage: -2.5V
High density mounting: SOT-23
u
s Pin Configuration
D
3
12
GS
SOT-23
(TOP VIEW)
s Equivalent Circuit
3
12
P-Channel MOS FET
(1 device built-in)
s Pin Assignment
PIN
NUMBER
PIN
NAME
1G
2S
3D
FUNCTION
Gate
Source
Drain
s Absolute Maximum Ratings
Ta=25:
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
-20 V
±12 V
-0.5 A
-1.5 A
-0.5 A
Continuous Channel
Power Dissipation (note)
Pd
0.5 W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a glass epoxy PCB
150
-55~150
:
:

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