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PDF XP161A1355PR Data sheet ( Hoja de datos )

Número de pieza XP161A1355PR
Descripción Power MOSFET ( Transistor )
Fabricantes Torex Semiconductor 
Logotipo Torex Semiconductor Logotipo



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No Preview Available ! XP161A1355PR Hoja de datos, Descripción, Manual

NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.05(max)
NUltra High-Speed Switching
NSOT-89 Package
NGate Protect Diode Built-in
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
The XP161A1355PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.05( Vgs = 4.5V )
: Rds (on) = 0.07( Vgs = 2.5V )
: Rds (on) = 0.15( Vgs = 1.5V )
Ultra high-speed switching
Gate protect diode built-in
Operational Voltage : 1.5V
High density mounting : SOT-89
PIN
NUMBER
1
2
3
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
11
Ta=25OC
PARAMETER
SYMBOL RATINGS
UNITS
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Vdss
Vgss
Id
Idp
Idr
Pd
20
8
4
16
4
2
V
V
A
A
A
W
Power Dissipation (note)
Channel Temperature Tch 150
OC
Storage Temperature
Tstg - 55 ~ 150
OC
( note ) : When implemented on a ceramic PCB
846

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